Channeling studies of deuterium: Defect interactions in vanadium

Abstract
The lattice location of deuterium absorbed (VD0.008) or implanted in vanadium has been studied by channeling experiments. Deuterium is found in the tetrahedral sites for thermally doped specimens and in displaced tetrahedral sites (0.36 Å towards the octahedral sites) for implantation doped specimens. The difference in the lattice location is explained by the presence of trapping centers after deuterium implantation.