Homogeneous switching in ultrathin ferroelectric films
- 8 December 2011
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 24 (1), 015902
- https://doi.org/10.1088/0953-8984/24/1/015902
Abstract
It is well known that there are two possible switching mechanisms in ferroelectric crystals and films (see, e.g., Tagantsev et al 2010 Domains in Ferroic Crystals and Thin Films (Berlin: Springer)). The first mechanism, which follows from the mean-field theory of Landau-Ginzburg, is a homogeneous one and does not connect domains. This mechanism was never observed before 1998. The second mechanism, connected with nucleation and domain movement, is common for the ferroelectrics and is well known from the time of domain discovery (1956). In the present paper the existence of a homogeneous mechanism of switching in ultrathin copolymer films is confirmed by piezoresponse force microscopy. The results of the present paper permit us to suppose that homogeneous switching exists in other ultrathin ferroelectric films.Keywords
This publication has 8 references indexed in Scilit:
- Polarization Switching without Domain Formation at the Intrinsic Coercive Field in Ultrathin FerroelectricPhysical Review Letters, 2010
- Domains in Ferroic Crystals and Thin FilmsPublished by Springer Science and Business Media LLC ,2010
- Switching time dispersion and retention of bistable states in Langmuir-Blodgett ferroelectric filmsJournal of Experimental and Theoretical Physics, 2004
- Kinetics of ferroelectric switching in ultrathin filmsPhysical Review B, 2003
- Nanoscale polarization manipulation and conductance switching in ultrathin films of a ferroelectric copolymerApplied Physics Letters, 2003
- Two-dimensional ferroelectric filmsNature, 1998
- Ferroelectric Langmuir-Blodgett filmsFerroelectrics Letters Section, 1995
- Ferroelectric properties of vinylidene fluoride copolymersPhase Transitions, 1989