Electric-field-driven dual-functional molecular switches in tunnel junctions
- 1 June 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nature Materials
- Vol. 19 (8), 843-848
- https://doi.org/10.1038/s41563-020-0697-5
Abstract
To avoid crosstalk and suppress leakage currents in resistive random access memories (RRAMs), a resistive switch and a current rectifier (diode) are usually combined in series in a one diode–one resistor (1D–1R) RRAM. However, this complicates the design of next-generation RRAM, increases the footprint of devices and increases the operating voltage as the potential drops over two consecutive junctions1. Here, we report a molecular tunnel junction based on molecules that provide an unprecedented dual functionality of diode and variable resistor, resulting in a molecular-scale 1D–1R RRAM with a current rectification ratio of 2.5 × 104 and resistive on/off ratio of 6.7 × 103, and a low drive voltage of 0.89 V. The switching relies on dimerization of redox units, resulting in hybridization of molecular orbitals accompanied by directional ion migration. This electric-field-driven molecular switch operating in the tunnelling regime enables a class of molecular devices where multiple electronic functions are preprogrammed inside a single molecular layer with a thickness of only 2 nm.Keywords
Funding Information
- Department of Education and Training | Australian Research Council (FT160100207)
- National Science Foundation (ECCS#1916874)
- Science Foundation Ireland (12/RC/2275, 15/CDA/3491)
- Ministry of Education - Singapore (MOE2018-T2-1-088)
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