High-efficiency silicon-compatible photodetectors based on Ge quantum dots
- 30 May 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 98 (22), 221107
- https://doi.org/10.1063/1.3597360
Abstract
We report on high responsivity, broadband metal/insulator/semiconductor photodetectors with amorphous Ge quantum dots (a-Ge QDs) as the active absorbers embedded in a silicon dioxide matrix. Spectral responsivities between 1–4 A/W are achieved in the 500–900 nm wavelength range with internal quantum efficiencies (IQEs) as high as . We investigate the role of a-Ge QDs in the photocurrent generation and explain the high IQE as a result of transport mechanisms via photoexcited QDs. These results suggest that a-Ge QDs are promising for high-performance integrated optoelectronic devices that are fully compatible with silicon technology in terms of fabrication and thermal budget.
Keywords
Funding Information
- U.S. Department of Energy (DE-SC0001556)
- National Science Foundation (DMR-0520651, DMR-0804915)
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