Electrical properties of narrow gap low carrier concentration p-Hg1−xCdxTe
- 3 May 1982
- journal article
- Published by Elsevier BV in Physics Letters A
- Vol. 89 (3), 151-153
- https://doi.org/10.1016/0375-9601(82)90879-9
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Effects of annealing on Hg0.79Cd0.21Te epilayersJournal of Applied Physics, 1980
- Electrical and far-infrared optical properties of p-type Hg1−xCdxTeJournal of Applied Physics, 1976
- Carrier freeze-out and acceptor energies in p-type Hg1−xCdxTeJournal of Physics and Chemistry of Solids, 1972
- Anomalous Electrical Properties of p-Type Hg1−xCdxTeJournal of Applied Physics, 1971