Extension of the C-V doping profile technique to study the movements of alloyed junction and substrate out-diffusion, the separation of junctions, and device area trimming
- 1 April 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (4), 525-529
- https://doi.org/10.1109/16.2491
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- On the theory of Debye averaging in the C-V profiling of semiconductorsSolid-State Electronics, 1981
- Avalanche breakdown criterion from doping profile integralIEEE Transactions on Electron Devices, 1972
- Diode edge effect on doping-profile measurementsIEEE Transactions on Electron Devices, 1970