The dependence of Schottky barrier potential on substrate orientation in PtSi infrared diodes

Abstract

Platinum silicide Schottky barrier infrared diodes have been formed on p-type silicon substrates having both 〈100〉 and 〈111〉 orientations. The potential barrier to optically generated hot carriers has been measured and found to be 0.219 eV for 〈100〉 substrates and 0.313 eV for 〈111〉. Platinum-layer thickness was varied from 1 to 10 nm. The nearly 0.1 eV difference in Schottky barrier potential appears to depend only on the orientation of the silicon substrates.