Continuous order-disorder phase transition (2×2)→(1×1) on the (0001)AlN surface
- 1 June 2007
- journal article
- review article
- Published by Wiley in physica status solidi (c)
- Vol. 4 (7), 2498-2501
- https://doi.org/10.1002/pssc.200674867
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Investigation of growth mechanisms of GaN quantum dots on (0001)AlN surface by ammonia MBEphysica status solidi (c), 2006
- Growth kinetics of (0001)GaN from Ga and NH 3 fluxesphysica status solidi (c), 2004
- Origins of GaN(0001) surface reconstructionsSurface Science, 2003
- GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculationsSurface Science, 1999
- Growth and applications of Group III-nitridesJournal of Physics D: Applied Physics, 1998
- The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser DiodesScience, 1998
- Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Reconstructions of theSurfacePhysical Review Letters, 1997
- Nitride-based semiconductors for blue and green light-emitting devicesNature, 1997
- Triangular Lattice GasPhysical Review A, 1972