Below-band-gap third-order optical nonlinearity of nanometer-size semiconductor crystallites
- 24 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (8), 1200-1203
- https://doi.org/10.1103/PhysRevLett.68.1200
Abstract
We find evidence that quantum confinement of electrons in small semiconductor particles causes the nonlinear optical properties in the transparency region to differ markedly from those of bulk semiconductors. The optical Stark effect makes the dominant contribution to the third-order refractive nonlinearity.Keywords
This publication has 21 references indexed in Scilit:
- Dispersion of bound electron nonlinear refraction in solidsIEEE Journal of Quantum Electronics, 1991
- Dispersion and band-gap scaling of the electronic Kerr effect in solids associated with two-photon absorptionPhysical Review Letters, 1990
- Dynamics of the Optical Stark Effect in SemiconductorsJournal of Modern Optics, 1988
- Third-order optical nonlinearities in semiconductor microstructuresPhysical Review B, 1988
- Absorption saturation in commercial and quantum-confine CdSexS_1−x-doped glassesJournal of the Optical Society of America B, 1988
- Very large optical nonlinearity of semiconductor microcrystallitesPhysical Review B, 1988
- Quantum confinement effects of semiconducting microcrystallites in glassJournal of Applied Physics, 1987
- Theory of the linear and nonlinear optical properties of semiconductor microcrystallitesPhysical Review B, 1987
- Optical Stark effect on excitons in GaAs quantum wellsOptics Letters, 1986
- Quantum size effect in semiconductor microcrystalsSolid State Communications, 1985