Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
- 2 December 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (23), 4392-4394
- https://doi.org/10.1063/1.1528726
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
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