Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation
- 1 December 2001
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 184 (1-4), 399-403
- https://doi.org/10.1016/s0169-4332(01)00684-5
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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