Self-aligned μTrench phase-change memory cell architecture for 90nm technology and beyond
- 1 January 2007
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A novel self-aligned muTrench-based cell architecture for phase change memory (PCM) process is presented. The low-programming current and the good dimensional control of the sub-lithographic features achieved with the muTrench structure are combined with a self-aligned patterning strategy that simplify the integration process in term of alignment tolerances and of number of critical masks. The proposed architecture has been integrated in a 90 nm 128 Mb vehicle with programming currents of 300 muA and good distributions, demonstrating its suitability for the production of high-density PCM arrays at 90 nm and beyond.Keywords
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