Design and Characterization of Integrated Submillimeter-Wave Quasi-Vertical Schottky Diodes
- 21 October 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Terahertz Science and Technology
- Vol. 5 (1), 73-80
- https://doi.org/10.1109/tthz.2014.2361434
Abstract
This work reports on a new approach to realizing vertically oriented Schottky diodes, with ohmic contact formed directly below the anode, that can be readily integrated into planar millimeter and submillimeter-wave circuits. The diode structure is based on backside processing and bonding of the diode epitaxy to a host, high-resistivity silicon substrate that supports both the vertical diode and its associated circuitry. A set of prototype diodes of different anode diameters are fabricated for characterization at both dc and (for the first time) submillimeter-wave frequencies (325-750 GHz) using micromachined on-wafer probes. Device equivalent circuit parameters extracted from these measurements are in good agreement with those expected from fundamental Schottky barrier diode theory and indicate the vertically oriented diodes yield series resistance values that are comparable to or lower than planar-oriented diodes of similar dimensions.Keywords
This publication has 22 references indexed in Scilit:
- Analytical Extraction of a Schottky Diode Model From Broadband $S$-ParametersIEEE Transactions on Microwave Theory and Techniques, 2013
- Impact of Eddy Currents and Crowding Effects on High-Frequency Losses in Planar Schottky DiodesIEEE Transactions on Electron Devices, 2011
- Opening the terahertz window with integrated diode circuitsIEEE Journal of Solid-State Circuits, 2005
- Broad-band 180/spl deg/ phase shifters using integrated submillimeter-wave Schottky diodesIEEE Transactions on Microwave Theory and Techniques, 2005
- An All-Solid-State Broad-Band Frequency Multiplier Chain at 1500 GHzIEEE Transactions on Microwave Theory and Techniques, 2004
- Planar GaAs Schottky diodes integrated with quartz substrate circuitry for waveguide subharmonic mixers at 215 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Fabrication of 200 to 2700 GHz multiplier devices using GaAs and metal membranesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Series impedance of GaAs planar Schottky diodes operated to 500 GHzIEEE Transactions on Microwave Theory and Techniques, 1992
- Cutoff Frequency of Submillimeter Schottky-Barrier DiodesIEEE Transactions on Microwave Theory and Techniques, 1978
- Spreading Resistance as a Function of FrequencyIEEE Transactions on Microwave Theory and Techniques, 1967