Enhanced Intergrain Tunneling Magnetoresistance in Half-Metallic CrO 2 Films
- 28 November 1997
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 278 (5343), 1607-1609
- https://doi.org/10.1126/science.278.5343.1607
Abstract
Low-field tunneling magnetoresistance was observed in films of half-metallic CrO 2 that were grown by high-pressure thermal decomposition of CrO 3 . High-temperature annealing treatments modified the intergrain barriers of the as-grown films through surface decomposition of CrO 2 into insulating Cr 2 O 3 , which led to a threefold enhancement of the low-field magnetoresistance. This enhancement indicates the potential of this simple method to directly control the interface barrier characteristics that determine the magnetotransport properties.Keywords
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