Photoluminescence decay measurements of n- and p-type doped ZnSe grown by molecular beam epitaxy
- 31 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (5), 589-591
- https://doi.org/10.1063/1.111086
Abstract
Time‐resolved photoluminescence has been used to study carrier recombination in n‐ and p‐type doped ZnSe at room temperature. A band‐edge photoluminescence decay time of ∼240 ps has been measured for heavily doped n‐type material together with a relaxation time of a few microseconds for the associated deep‐level emission. The band‐edge photoluminescence decay time for p‐type doped material was ≤11 ps and is indicative of a high level of nonradiative Shockley–Read recombination.Keywords
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