Transport properties of composition tunedα- andβEu8Ga16xGe30+x

Abstract
This paper presents the transport properties of several composition tuned α- and βEu8Ga16xGe30+x samples where 0.28x0.48 for the α samples and 0.49x1.01 for the β samples. Among samples with the same structure (α or β), the varying physical properties can be understood in terms of a rigid conduction band where only the charge carrier concentration is varied. The differences in the physical properties between α and β samples can be explained by a charge-carrier effective mass (m*) that is more than three times larger in the β phase than in the α phase. As a result of the low charge-carrier mobility we argue that the thermoelectric figure of merit of n-type α- and βEu8Ga16xGe30+x, without modifications to enhance the thermoelectric properties, will not exceed that of the best materials at room temperature. From modeling the lattice thermal conductivity (κL) of α- and βEu8Ga16xGe30+x, it is proposed that κL of all clathrates with divalent cations can be described by phonon-charge-carrier scattering at low temperatures and resonant scattering at higher temperatures. This contradicts earlier models where the low-temperature κL of βEu8Ga16Ge30 and Sr8Ga16Ge30 is modeled by scattering of phonons from tunneling states. However, since the phonon-charge-carrier scattering rate increases with (m*)2 the advantage of the phonon-charge-carrier scattering model is the ability to explain the lower low-temperature κL of βEu8Ga16xGe30+x, compared to αEu8Ga16xGe30+x.