Epitaxial growth of aluminum nitride
- 31 October 1967
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 10 (10), 1023-1027
- https://doi.org/10.1016/0038-1101(67)90152-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Refraction Index Measurements on AlN Single CrystalsPhysica Status Solidi (b), 1966
- Epitaxial Growth of Silicon Carbide by the Thermal Reduction TechniqueJournal of the Electrochemical Society, 1966
- Space charge conduction and electrical behaviour of aluminium nitride single crystalsSolid State Communications, 1965
- THE VAPORIZATION BEHAVIOR OF BORON NITRIDE AND ALUMINUM NITRIDE1The Journal of Physical Chemistry, 1963
- Some Properties of Aluminum NitrideJournal of the Electrochemical Society, 1960
- Preparation of Crystals of InAs, InP, GaAs, and GaP by a Vapor Phase ReactionJournal of the Electrochemical Society, 1959
- Herstellung der Nitride von Bor, Aluminium, Gallium und Indium nach dem AufwachsverfahrenZeitschrift für anorganische und allgemeine Chemie, 1959
- Preparation of Crystals of Pure Hexagonal SiCJournal of the Electrochemical Society, 1958
- Propriétés électroniques du nitrure d’aluminiumJournal de Chimie Physique et de Physico-Chimie Biologique, 1956