An approach to modeling of silicon oxidationin a wet ultra-diluted ambient
- 17 June 2005
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 80, 432-435
- https://doi.org/10.1016/j.mee.2005.04.101
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- The initial growth rate of thermal silicon oxidephysica status solidi (a), 1989
- The modelling of silicon oxidation from 1 × 10−5 to 20 atmospheresJournal of Electronic Materials, 1987
- Electrolysis of SiO2 on SiliconThe Journal of Chemical Physics, 1968
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965