Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from Silicon Tetraacetate

Abstract

Silicon dioxide thin films were prepared by a low-temperature chemical vapor deposition method. The raw material was silicon tetraacetate which is nontoxic and easy to handle. At a reaction temperature above 150°C, the thin films were obtained with a high deposition rate. The reaction temperature and the deposition rate are comparable to the corresponding values in the chemical vapor depositions of SiO₂ from hydride and alkoxide. In addition, the deposition can be carried out in air. Silicon tetraacetate appears to offer a viable alternative to silicon hydride and alkoxide for low-temperature SiO₂ production.