Atomic layer epitaxial growth of ZnSe, ZnTe, and ZnSe-ZnTe strained-layer superlattices

Abstract

ZnSe and ZnTe thin films and ZnSe‐ZnTe strained‐layer superlattices (SLS) have been successfully grown by atomic layer epitaxy (ALE) using molecular‐beam epitaxy. The ALE growth of ZnSe and ZnTe was achieved at substrate temperatures between 250 and 350 °C and between 240 and 280 °C, respectively. The Zn, Se, and Te beam intensities necessary to achieve ALE growth were evaluated. Under optimum growth conditions, the surfaces of ZnSe and ZnTe thin films were very specular without any surface structure. Modulation‐doped n‐type SLSs have been prepared by ALE using Cl as a n‐type dopant. The carrier concentration of superlattices grown by ALE (3.8×10¹⁶ cm⁻³) was three orders of magnitude higher than those of superlattices grown by conventional molecular‐beam epitaxy.