Maskless photolithography: Embossed photoresist as its own optical element
- 11 November 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (20), 2893-2895
- https://doi.org/10.1063/1.122621
Abstract
This letter demonstrates that features embossed on the surface of a layer of photoresist can direct UV light in the photoresist layer. These topographical features act as optical elements: they focus/disperse and phase shift incident light in the optical near field, inside the resist layer. A number of different surface topographies have been examined, which give 50–250 nm features after exposure and development. This method gives patterns of complex features over large areas, in a parallel process, that can then be transferred into silicon or metal. It provides a method for controlling the intensity of light inside a thin film of photoresist.Keywords
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