Effect of selenization pressure on CuInSe 2 thin films selenized using co-sputtered Cu-In precursors
- 25 May 2000
- journal article
- Published by Elsevier BV in Solar Energy Materials and Solar Cells
- Vol. 62 (4), 357-368
- https://doi.org/10.1016/s0927-0248(99)00157-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The influence of argon pressure on the structure of sputtered molybdenum: From porous amorphous to a new type of highly textured filmJournal of Applied Physics, 1996
- Improved Selenization Procedure to Obtain CulnSe2 Thin Films from Sequentially Electrodeposited PrecursorsJournal of the Electrochemical Society, 1996
- Micro-Raman spectroscopy in polycrystalline CuInSe2 formationApplied Physics A, 1994
- Preparation of Homogeneous Polycrystalline CulnSe2 Thin Films by a Two‐Step Chemical‐Vapor‐Transport ProcessJournal of the Electrochemical Society, 1994
- Raman spectra ofPhysical Review B, 1992
- Study of CuInSe2 Formation Kinetics in the Selenization Process by Raman SpectroscopyJapanese Journal of Applied Physics, 1991
- Low Pressure Vapor Phase Selenization of Cu-in Films without H2SePublished by Springer Science and Business Media LLC ,1991
- The Cu−In (Copper-Indium) systemBulletin of Alloy Phase Diagrams, 1989
- Optical properties and characterization of CuInSe2Solar Cells, 1986
- The thermalization of energetic atoms during the sputtering processJournal of Vacuum Science & Technology A, 1984