2 W∕mm output power density at 1 GHz for diamond FETs
- 1 January 2005
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 41 (22), 1249-1250
- https://doi.org/10.1049/el:20053194
Abstract
Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 µm and gate width of 100 µm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.Keywords
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