Photoluminescence studies of CuInSe2: Identification of intrinsic defect levels
- 17 August 1984
- journal article
- Published by Elsevier BV in Progress in Crystal Growth and Characterization
- Vol. 10, 365-370
- https://doi.org/10.1016/0146-3535(84)90057-1
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Polycrystalline thin-film CuInSe2/CdZnS solar cellsIEEE Transactions on Electron Devices, 1984
- Influence of Intrinsic Defects on the Electrical Properties of CuInSe2physica status solidi (a), 1984
- A photoluminescence study on lithium ternary compoundsIl Nuovo Cimento D, 1983
- Influence of intrinsic defects on the electrical properties of AIBIIIC compoundsCrystal Research and Technology, 1983
- Luminescence of CuInS2: II. Exciton and near edge emissionJournal of Luminescence, 1982
- Luminescence of CuInS2: I. The broad band emission and its dependence on the defect chemistryJournal of Luminescence, 1982
- Impurity States in CuInSe2Crystal Research and Technology, 1981
- Ternary chalcopyrite compoundsProgress in Crystal Growth and Characterization, 1979
- Optical Emission From SemiconductorsAnnual Review of Materials Science, 1974
- Temperature dependence of pair band luminescence in GaPJournal of Physics and Chemistry of Solids, 1965