Electrical properties of grain boundaries in polycrystalline compound semiconductors
- 1 February 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (2), 111-137
- https://doi.org/10.1088/0268-1242/5/2/001
Abstract
No abstract availableThis publication has 81 references indexed in Scilit:
- Electron spectroscopic studies of electrically active grain boundaries in ZnOSurface Science, 1987
- Summary Abstract: Chemical analysis of i n s i t u fractured materials by x-ray photoelectron spectroscopy, Auger electron spectroscopy, and ion scattering spectroscopyJournal of Vacuum Science & Technology A, 1987
- Grain Boundaries In Polycrystalline CeramicsAnnual Review of Materials Science, 1987
- Metal Oxide VaristorsAnnual Review of Materials Science, 1987
- Electrical and Electronic Properties of Grain Boundaries in SiliconMRS Proceedings, 1987
- A high-resolution transmission electron microscope study of a zinc oxide varistorJournal of Materials Science, 1985
- Grain boundaries in semiconductorsJournal of Physics C: Solid State Physics, 1985
- Carrier transport at grain boundaries in semiconductorsJournal of Applied Physics, 1984
- Theory of conduction in ZnO varistorsJournal of Applied Physics, 1979
- The microstructural location of the intergranular metal-oxide phase in a zinc oxide varistorJournal of Applied Physics, 1978