Photoconductor gain mechanisms in GaN ultraviolet detectors
- 18 August 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (7), 870-872
- https://doi.org/10.1063/1.119673
Abstract
GaN photoconductive detectors have been fabricated on sapphire substrates by metal organic vapor phase epitaxy and gas-source molecular beam epitaxy on Si (111) substrates. The photodetectors showed high photoconductor gains, a very nonlinear response with illuminating power, and an intrinsic nonexponential photoconductance recovery process. A novel photoconductor gain mechanism is proposed to explain such results, based on a modulation of the conductive volume of the layer.This publication has 11 references indexed in Scilit:
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