Role of marangoni tension effects on the melt convection in directional solidification process for multi-crystalline silicon ingots
- 1 May 2012
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 346 (1), 40-44
- https://doi.org/10.1016/j.jcrysgro.2012.02.031
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Numerical Study of Melt Convection and Interface Shape in a Pilot Furnace for Unidirectional Solidification of Multicrystalline SiliconCrystal Growth & Design, 2011
- Effects of argon flow on heat transfer in a directional solidification process for silicon solar cellsJournal of Crystal Growth, 2011
- Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cellsJournal of Crystal Growth, 2010
- Impurity segregation in directional solidified multi-crystalline siliconJournal of Crystal Growth, 2010
- Numerical study on transport phenomena in a directional solidification process in the presence of travelling magnetic fieldsJournal of Crystal Growth, 2010
- About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstockJournal of Crystal Growth, 2010
- Three-dimensional global modeling of a unidirectional solidification furnace with square cruciblesJournal of Crystal Growth, 2007
- Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cellsPhysica B: Condensed Matter, 2006
- Oxygen and Carbon Precipitation in Multicrystalline Solar Siliconphysica status solidi (a), 1999
- The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystalsJournal of Crystal Growth, 1998