Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definition

Abstract

In this paper, studies of the molecular beam epitaxy (MBE) of GaAs‐Ga_1−xAl_xAs multilayer structures over preferentially etched channels on GaAs substrates are described. It is found that the growth characteristics with MBE are entirely different from those obtained from similar experiments when LPE is used. Results obtained indicate that this etch‐and‐fill technique using MBE as the growth process should be particularly useful in fabricating injection lasers, laser arrays, and integrated optics components which require planar definition.