Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55μm: Fabrication and characterization
- 23 June 2008
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (25), 251104
- https://doi.org/10.1063/1.2952193
Abstract
In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55 μ m , are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu ∕ Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55 μ m is experimentally demonstrated.Keywords
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