Growth of GaAs on Si by MOVCD
- 1 September 1984
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 68 (1), 21-26
- https://doi.org/10.1016/0022-0248(84)90391-9
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Heteroepitaxy of vacuum-evaporated Ge films on single-crystal SiApplied Physics Letters, 1981
- Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and GeJournal of Crystal Growth, 1977