Electrical and Photoelectrical Properties of Vacuum Deposited SnSe Thin Films
- 1 August 2000
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 35 (8), 949-957
- https://doi.org/10.1002/1521-4079(200008)35:8<949::aid-crat949>3.0.co;2-r
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Tin selenide (SnSe) thin films prepared by reactive evaporationJournal of Materials Science, 1994
- Electrooptic properties of polycrystalline SnSe thin filmsCrystal Research and Technology, 1989
- Steady state and transient photoconductivity in a-Sb15Ge10Se75Journal of Non-Crystalline Solids, 1988
- Three-dimensional quantum-size effect in chemically deposited cadmium selenide filmsPhysical Review B, 1987
- Electrodeposition and Analysis of Tin Selenide FilmsJournal of the Electrochemical Society, 1986
- Far ultraviolet photoelectric study of thin SnSe evaporated filmsPhysica Status Solidi (b), 1983
- Single crystal growth of stannous selenideJournal of Crystal Growth, 1979
- Ovonic type switching in tin selenide thin filmsJournal of Vacuum Science and Technology, 1975
- Recombination in amorphous arsenic triselenidephysica status solidi (a), 1974
- Small polaron conduction in V2O5P2O5 glassesJournal of Non-Crystalline Solids, 1973