Densely arrayed eight-wavelength semiconductor lasers fabricated by microarray selective epitaxy
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 5 (3), 428-434
- https://doi.org/10.1109/2944.788401
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Investigations of thermal crosstalk in laser arrays for WDM applicationsJournal of Lightwave Technology, 1998
- Migration-controlled narrow-stripe selective MOVPE for high-quality MQWsJournal of Crystal Growth, 1997
- Detuning adjustable multiwavelength MQW-DFB laser array grown by effective index/quantum energy control selective area MOVPEIEEE Photonics Technology Letters, 1994
- Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVDIEEE Photonics Technology Letters, 1994
- 10 wavelength MQW-DBR lasers fabricated by selective MOVPE growthElectronics Letters, 1994
- Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structuresJournal of Crystal Growth, 1993
- Simultaneous operation of ten-channel tunable DFB laser arrays using strained-InGaAsP multiple quantum wellsIEEE Journal of Quantum Electronics, 1993
- Thermal interaction in a distributed-feedback laser diode (DFB LD) array moduleJournal of Lightwave Technology, 1993
- Monolithic integration of multiwavelength compressive-strained multiquantum-well distributed-feedback laser array with star coupler and optical amplifiersElectronics Letters, 1992
- 1.5 μm compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arraysElectronics Letters, 1992