The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes
- 29 February 2012
- journal article
- Published by Elsevier BV in Journal of Luminescence
- Vol. 132 (2), 429-433
- https://doi.org/10.1016/j.jlumin.2011.09.001
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Quaternary AlInGaN multiple quantum well 368nm light-emitting diodeJournal of Crystal Growth, 2006
- Room temperature near-ultraviolet emission from In-rich InGaN∕GaN multiple quantum wellsApplied Physics Letters, 2005
- Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methodsApplied Physics Letters, 2005
- Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodesApplied Physics Letters, 2004
- Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wellsApplied Physics Letters, 2000
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997
- Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light EmittersJapanese Journal of Applied Physics, 1997
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- Influence of the vertical structure on the mirror facet temperatures of visible GaInP quantum well lasersApplied Physics Letters, 1993
- Temperature distribution along the striped active region in high-power GaAlAs visible lasersJournal of Applied Physics, 1985