Selective Growth of Strained Ge Channel on Relaxed SiGe Buffer in Shallow Trench Isolation for High Mobility Ge Planar and Fin p-FET
- 15 March 2013
- journal article
- Published by The Electrochemical Society in ECS Transactions
- Vol. 50 (9), 39-45
- https://doi.org/10.1149/05009.0039ecst