Electrical characterization and subband structures in antimony δ-doped molecular beam epitaxy-silicon layers
- 30 December 1989
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 183 (1-2), 331-338
- https://doi.org/10.1016/0040-6090(89)90458-6
Abstract
No abstract availableKeywords
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