Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor
- 14 March 2001
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 16 (4), 260-262
- https://doi.org/10.1088/0268-1242/16/4/313
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- High current density 800-V 4H-SiC gate turn-off thyristorsIEEE Electron Device Letters, 1999
- Turn-on process in high voltage 4H-SiC thyristorsSemiconductor Science and Technology, 1998
- 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)IEEE Electron Device Letters, 1997
- A high-current and high-temperature 6H-SiC thyristorIEEE Electron Device Letters, 1996