Control of Carrier Type and Density in Exfoliated Graphene by Interface Engineering
- 6 December 2010
- journal article
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 5 (1), 408-412
- https://doi.org/10.1021/nn102236x
Abstract
Air-stable, n-doped or p-doped graphene sheets on a chip were achieved by modifying the substrates with self-assembled layers of silane and polymer. The interfacial effects on the electronic properties of graphene were investigated using micro-Raman and Kelvin probe force microscopy (KPFM). Raman studies demonstrated that the phonon vibrations were sensitive to the doping level of graphene on the various substrates. Complementary information on the charge transfer between the graphene and substrate was extracted by measuring the surface potential of graphene flakes using KPFM, which illustrated the distribution of carriers in different graphene layers as well as the formation of dipoles at the interface. The Fermi level of single layer graphene on the modified substrates could be tuned in a range from -130 to 90 mV with respect to the Dirac point, corresponding to the doped carrier concentrations up to 10(12) cm(-2).This publication has 31 references indexed in Scilit:
- Hysteresis in the resistance of a graphene device induced by charge modulation in the substrateApplied Physics Letters, 2010
- Effects of Metallic Contacts on Electron Transport through GraphenePhysical Review Letters, 2010
- Tuning the Graphene Work Function by Electric Field EffectNano Letters, 2009
- N-Doping of Graphene Through Electrothermal Reactions with AmmoniaScience, 2009
- Ultrahigh electron mobility in suspended grapheneSolid State Communications, 2008
- Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect TransistorsPhysical Review Letters, 2008
- Electronic transport in nanometre-scale silicon-on-insulator membranesNature, 2006
- Experimental observation of the quantum Hall effect and Berry's phase in grapheneNature, 2005
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004
- Stacked pentacene layer organic thin-film transistors with improved characteristicsIEEE Electron Device Letters, 1997