Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs
- 1 December 2013
- journal article
- research article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 112, 204-207
- https://doi.org/10.1016/j.mee.2013.03.120
Abstract
No abstract availableKeywords
Funding Information
- EU FP7 (287602)
This publication has 11 references indexed in Scilit:
- A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistorsApplied Physics Letters, 2012
- Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin FilmIEEE Electron Device Letters, 2012
- Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility TransistorsJapanese Journal of Applied Physics, 2011
- Effect of Electron Density on Extreme Ultraviolet Output of a Z-Pinch Xe Discharge Produced Plasma SourceJapanese Journal of Applied Physics, 2011
- Al 0.44 Ga 0.56 N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructuresApplied Physics Letters, 2011
- Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN InterfaceJapanese Journal of Applied Physics, 2011
- Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN InterfaceJapanese Journal of Applied Physics, 2011
- Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistorsApplied Physics Letters, 2010
- A new kind of magnetic targeting induction heating drug carrier and its physical and biological propertiesScience China Technological Sciences, 2009
- Discontinuous deformation analysis based on complementary theoryScience China Technological Sciences, 2009