A low-temperature-grown TiO2-based device for the flexible stacked RRAM application
- 22 February 2010
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 21 (11), 115203
- https://doi.org/10.1088/0957-4484/21/11/115203
Abstract
Flexible TiO(2) crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO(2)/Al memory cells on polyethersulfone (PES) showed an enhanced endurance property (up to 10(4) cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO(2)/Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference.Keywords
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