Ferromagnetism in 200-MeV Ag+15-ion-irradiated Co-implanted ZnO thin films
- 3 April 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (14), 142502
- https://doi.org/10.1063/1.2192577
Abstract
Structural,electrical resistivity, and magnetization properties of 200 - MeV Ag + 15 -ion-irradiated Co-implanted ZnOthin films are presented. The structural studies show the presence of Co clusters whose size is found to increase with increase of Co implantation. The implantedfilms were irradiated with 200 - MeV Ag + 15 ions to fluence of 1 × 10 12 ions ∕ cm 2 . The Co clusters on irradiation dissolve in the ZnO matrix. The electrical resistivity of the irradiated samples is lowered to half. The magnetization hysteresis measurements show ferromagnetic behavior at 300 K , and the coercive field increases with the Co implantation. The ferromagnetism at room temperature is confirmed by magnetic force microscopy measurements. The results are explained on the basis of the close interplay between the electrical and the magnetic properties.Keywords
This publication has 18 references indexed in Scilit:
- Ferromagnetism in Co- and Mn-doped ZnOSolid-State Electronics, 2003
- Ferromagnetism in cobalt-implanted ZnOApplied Physics Letters, 2003
- Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnONature Materials, 2003
- Ferromagnetism in Mn- and Co-implanted ZnO nanorodsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003
- A key to room-temperature ferromagnetism in Fe-doped ZnO: CuApplied Physics Letters, 2002
- Electronic structure and ferromagnetism of transition-metal-impurity-doped zinc oxidePhysica B: Condensed Matter, 2001
- Spintronics: A Spin-Based Electronics Vision for the FutureScience, 2001
- Magnetic and electric properties of transition-metal-doped ZnO filmsApplied Physics Letters, 2001
- Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium DioxideScience, 2001
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998