Molecular beam epitaxial growth of single-crystal Al films on GaAs (110)
- 15 January 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (2), 155-157
- https://doi.org/10.1063/1.93020
Abstract
Molecular beam epitaxy methods have been used to grow good quality single-crystal films of fcc Al on (110) GaAs. These films were characterized by Auger, high energy electron diffraction, and glancing incidence x-ray diffraction using a Read camera. Successful growth was found to be dependent upon increased flux rates and lowered substrate temperatures in order to overcome the high surface mobility of Al on GaAs.Keywords
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