MOCVD growth of strained multiple quantum well structure for 1.3 μm InAsP/InP laser diodes
- 1 December 1999
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 43 (12), 2141-2146
- https://doi.org/10.1016/s0038-1101(99)00184-7
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasersIEEE Photonics Technology Letters, 1999
- Band discontinuity in strained In(As,P)/InP heterostructuresApplied Physics Letters, 1998
- Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulatorsApplied Physics Letters, 1993
- 1.3 μm InAsyP1−y/InP strained-layer quantum well laser diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1992
- Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wellsJournal of Electronic Materials, 1991
- Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InPApplied Physics Letters, 1989
- Photoluminescence excitation spectroscopy of GaxIn1−xAsyP1−y/InP quantum wellsApplied Physics Letters, 1988
- Band structure engineering of semiconductor lasers for optical communicationsJournal of Lightwave Technology, 1988
- Reduction of lasing threshold current density by the lowering of valence band effective massJournal of Lightwave Technology, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986