Boron ripening during solid-phase epitaxy of amorphous silicon
- 22 January 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 69 (4), 045204
- https://doi.org/10.1103/physrevb.69.045204
Abstract
By means of large-scale molecular dynamics simulations we provide a thorough atomic-scale picture of boron incorporation in crystalline silicon upon solid-phase epitaxy. The present results show that boron can either be incorporated as a substitutional dopant or form clusters with a low content of silicon self-interstitials. A full characterization of the formation process of boron-interstitial clusters and their stoichiometry is presented. The present results are consistent with available experimental information and also provide a deep physical insight into B-doped silicon solid-phase epitaxy.Keywords
This publication has 28 references indexed in Scilit:
- Thermodynamic and kinetic studies of laser thermal processing of heavily boron-doped amorphous silicon using molecular dynamicsJournal of Applied Physics, 2002
- Study of reverse annealing behaviors of p+/n ultrashallow junction formed using solid phase epitaxial annealingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
- Ultrahigh B dopingduring Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transportPhysical Review B, 2000
- Role of the bond defect for structural transformations between crystalline and amorphous silicon: A molecular-dynamics studyPhysical Review B, 2000
- Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanismsPhysical Review B, 2000
- Atomistic simulations of solid-phase epitaxial growth in siliconPhysical Review B, 2000
- Amorphous-crystal interface in silicon: A tight-binding simulationPhysical Review B, 1998
- Recrystallization of a planar amorphous-crystalline interface in silicon by low energy recoils: A molecular dynamics studyJournal of Applied Physics, 1995
- High-concentration boron diffusion in silicon: Simulation of the precipitation phenomenaJournal of Applied Physics, 1990
- Kinetics of solid phase crystallization in amorphous siliconMaterials Science Reports, 1988