Dynamic disorder in molecular semiconductors: Charge transport in two dimensions

Abstract

A semiclassical model to study charge transport in molecular semiconductors is extended from one to an arbitrary number of dimensions. The model is applied to the calculation of the chargemobility of the holes in the two dimensional plane of rubrene with the largest chargemobility. The absolute values of the computed mobilitytensor, evaluated without adjustable parameters, are in excellent agreement with the experimental results of Podzorov et al. [Phys. Rev. Lett. 95, 226601 (2005)] and have the correct temperature dependence. The localization length and density of states determined by dynamic disorder are analyzed in detail and provide a global description of the charge transport process in agreement with the spectroscopic experiments. The effect of correlation in the modeling of dynamic disorder is also investigated.