Nuclear Magnetic Resonance in Semiconductors. III. Exchange Broadening in GaAs and InAs
- 1 February 1958
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 109 (3), 808-809
- https://doi.org/10.1103/physrev.109.808
Abstract
Nuclear magnetic resonance lines have been observed for the more aboundant isotopes of the semiconductors GaAs and InAs. The resonances are broader than expected from nuclear dipolar widths alone. The additional broadening is explained by the indirect nuclear exchange mechanism and is consistent with previous measurements on the homologous semiconductors InSb and GaSb.Keywords
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