High efficiency GaN HEMT class-F synchronous rectifier for wireless applications
- 1 January 2015
- journal article
- Published by Institute of Electronics, Information and Communications Engineers (IEICE) in IEICE Electronics Express
- Vol. 12 (1), 20140952
- https://doi.org/10.1587/elex.11.20140952
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- High-efficiency X-Band MMIC GaN power amplifiers operating as rectifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014
- An E-pHEMT self-biased and self-synchronous class E rectifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014
- Reversible high efficiency amplifier/rectifier circuit for wireless power transmission systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- Class F rectifier RF-DC conversion efficiency analysisPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- Rectennas for microwave power transmissionIEICE Electronics Express, 2013
- High-Efficiency Harmonically Terminated Diode and Transistor RectifiersIEEE Transactions on Microwave Theory and Techniques, 2012
- Low-Power Wireless Power DeliveryIEEE Transactions on Microwave Theory and Techniques, 2012
- A new nonlinear HEMT model for AlGaN/GaN switch applicationsInternational Journal of Microwave and Wireless Technologies, 2010
- Time reversal duality and the synthesis of a double class E DC-DC converterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Time reversal duality in DC-DC convertersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002