Suspended single-electron transistors: Fabrication and measurement
- 23 February 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (9), 093101
- https://doi.org/10.1063/1.1870108
Abstract
We have fabricated suspended aluminumsingle-electron transistors in which the island is not in contact with the substrate. This type of device displays well-defined I ‐ V and d I ∕ d V ‐ V features typical for high-quality standard superconductingsingle-electron transistors.Keywords
This publication has 36 references indexed in Scilit:
- Capacitive Coupling of Atomic Systems to Mesoscopic ConductorsPhysical Review Letters, 2004
- Modulation of the charge of a single-electron transistor by distant defectsPhysical Review B, 1997
- Background charge noise in metallic single-electron tunneling devicesPhysical Review B, 1996
- Quantitative analysis of Josephson-quasiparticle current in superconducting single-electron transistorsPhysical Review B, 1996
- Photon-activated switch behavior in the single-electron transistor with a superconducting islandPhysical Review B, 1995
- Observation of the Resonant Tunneling of Cooper PairsPhysical Review Letters, 1994
- Coherent Cooper pair tunneling in systems of Josephson junctions: Effects of quasiparticle tunneling and of the electromagnetic environmentZeitschrift für Physik B Condensed Matter, 1991
- Observation of combined Josephson and charging effects in small tunnel junction circuitsPhysical Review Letters, 1989
- Fabrication of submicrometer freestanding single-crystal gallium arsenide and silicon structures for quantum transport studiesJournal of Vacuum Science & Technology B, 1988
- Fabrication and phonon transport studies in nanometer scale free-standing wiresJournal of Vacuum Science & Technology B, 1987