Resonant Electron Scattering by Defects in Single-Walled Carbon Nanotubes
- 12 January 2001
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 291 (5502), 283-285
- https://doi.org/10.1126/science.291.5502.283
Abstract
We report the characterization of defects in individual metallic single-walled carbon nanotubes by transport measurements and scanned gate microscopy. A sizable fraction of metallic nanotubes grown by chemical vapor deposition exhibits strongly gate voltage–dependent resistance at room temperature. Scanned gate measurements reveal that this behavior originates from resonant electron scattering by defects in the nanotube as the Fermi level is varied by the gate voltage. The reflection coefficient at the peak of a scattering resonance was determined to be about 0.5 at room temperature. An intratube quantum dot device formed by two defects is demonstrated by low-temperature transport measurements.This publication has 27 references indexed in Scilit:
- Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular ComputingScience, 2000
- Potential modulations along carbon nanotubesNature, 2000
- Nanotube Molecular Wires as Chemical SensorsScience, 2000
- Disorder, Pseudospins, and Backscattering in Carbon NanotubesPhysical Review Letters, 1999
- Localization in carbon nanotubes within a tight-binding modelPhysical Review B, 1999
- Direct Growth of Single-Walled Carbon Nanotube Scanning Probe Microscopy TipsJournal of the American Chemical Society, 1999
- Electron backscattering on single-wall carbon nanotubes observed by scanning tunneling microscopyEurophysics Letters, 1999
- Individual single-wall carbon nanotubes as quantum wiresNature, 1997
- Quantum conductance of carbon nanotubes with defectsPhysical Review B, 1996
- Structural and electronic properties of pentagon-heptagon pair defects in carbon nanotubesPhysical Review B, 1996