Elemental Topological Insulator with Tunable Fermi Level: Strained-Sn on InSb(001)
- 11 October 2013
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 111 (15), 157205
- https://doi.org/10.1103/physrevlett.111.157205
Abstract
We report on the epitaxial fabrication and electronic properties of a topological phase in strained -Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.
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