High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates
- 13 May 2008
- journal article
- review article
- Published by Wiley in physica status solidi (c)
- Vol. 5 (6), 1971-1973
- https://doi.org/10.1002/pssc.200778555
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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